Modeling Electromigration for Microelectronics Design
Author:
Affiliation:
1. School of Computing and Mathematical Sciences, University of Greenwich
2. Physics Department, School of Natural & Mathematical Sciences, King's College London
3. Department of Electronic Engineering, City University of Hong Kong
Publisher
Japan Society of Mechanical Engineers
Subject
General Medicine
Link
https://www.jstage.jst.go.jp/article/jcst/7/2/7_251/_pdf
Reference26 articles.
1. (1) K. N. Tu, Solder joint technology: materials, properties, and reliability, (2007), Springer Science
2. (2) Gerardinm, M., C. R. AcadSci Paris, 53:727, 1861
3. (3) Seith, W. and Wever, H., Z. Elektrochem., 59: 942, 1953
4. (4) Black JR. Electromigration failure modes in aluminum metallization for semiconductor devices. Proc IEEE Lett 1969; 57(9): 1578-94.
5. (5) Huntington, H.B and Grone,A.R. ,J.Phys Chem. Solid, 20,76,(1961)
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