Measurement and Evaluation of Electrical Properties of Semiconductor Wafer by Terahertz Waves
Author:
Affiliation:
1. Department of Mechanical Science & Engineering, Nagoya University
Publisher
Japan Society of Mechanical Engineers
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
https://www.jstage.jst.go.jp/article/kikaia1979/76/763/76_KJ00006164588/_pdf
Reference4 articles.
1. 1) BEARD M. C. Subpicosecond Carrier Dynamics in Low-temperature Grown GaAs as Measured by Time-resolved Terahertz Spectroscopy. Journal of Applied Physics. (2001) vol.90, no.12, p.5915-5923.
2. 2) TONOUCHI M. Terahertz Technology. Ohmsha. (2006) p.43-44.
3. 3) JEON T. Nature of Conduction in Doped Silicon. Physical Review Letters. (1997) vol.78, no.6, p.1106-1109.
4. 4) FEKETE L. Carrier Dynamics in Microcrystalline Silicon Studied by Time-resolved Terahertz Spectroscopy. Journal of Non-Crystalline Solids. (2006) vol.352, no.26-27, p.2846-2849.
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