In-Situ Measurement and Control of Wafer Temperature Using Micro Sensor : 2nd Report, Sensor Fabrication Based on MEMS Technology(Mechanical Systems)

Author:

BANDOH Kenichi1,IWABUCHI Osamu,YOKOTA Shinichi

Affiliation:

1. Industrial Machinery Research Department, Research Division KOMATSU Ltd.

Publisher

Japan Society of Mechanical Engineers

Subject

Industrial and Manufacturing Engineering,Mechanical Engineering,Mechanics of Materials

Reference13 articles.

1. 1) ARDEN W. International Technology Roadmap for Semiconductors-ITRS 2006 Update. Japan Electronics and Information Technology Industries Association et al.. (2006) p.2-18.

2. 2) KAWAMURA E. Advanced Semiconductor Process Technology. Press Journal. (2005) p.228-231.

3. 3) MURAKAMI T. Improvement of Gate CD Uniformity for 55 nm Node Logic Devices. Proceedings of SPIE. (2008) vol. 6922, p. "692210 - 1"-"692210-9" .

4. 4) BERGER L. Automated CD-Error Compensation for Negative-Tone Chemically Amplified Resist by Zone-Controlled Post-Exposure Bake. Proceedings of SPIE. (2003) vol.5256, p.380-391.

5. 5) SHIO K. Non-Contact Wafer Temperature Measurement Method with UV Light. Proceedings of the 56th Spring Meeting ; The Japan Society of Applied Physics and Related Societies, 2009. (2009)

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