Ab Initio Analysis of Point Defects in Plane-Stressed Si Single Crystal
Author:
Affiliation:
1. Department of System Engineering, Okayama Prefectural University
Publisher
Japan Society of Mechanical Engineers
Subject
General Medicine
Link
http://www.jstage.jst.go.jp/article/jcst/2/4/2_4_478/_pdf
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3. A model for oxygen precipitation in Czochralski silicon during crystal growth
4. (4) Shimura, F., Handoutai Silicon Kessyou Kougaku (in Japanese), (1993), p. 286, Maruzen.
5. (5) Sueoka, K., Shiba, S., and Fukutani, S., Transactions of the Japan Society of Mechanical Engineering, Series A, 72 (2006), pp. 801-808.
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