Author:
PETROSYAN O.H.,MOMJYAN A.M.,SHALJYAN D.S.,MANUCHARYAN D.V
Abstract
A latch sense amplifier with a biasing technique is designed and a new self-calibration unit (SCU) of power is presented for static random access memory (SRAM). Calibration of current which is the same as power consumption is calibrated for various frequencies is the range 0.5Ghz to 2.3Ghz. The advantage of such a sense amplifier is to control the current due to the bias-connected, saturated NMOS transistor. The simulation of the SCU scheme is applied in the presented sense amplifier. The results of simulation show that using the proposed SCU, the power consumption can reduce from 19% to 73% depending on frequency. The disadvantage of the proposed amplifier with a biasing technique increases the propagation delay from 8% to17% depending on frequency.
Publisher
National Polytechnic University of Armenia
Subject
Materials Chemistry,Polymers and Plastics,Surfaces, Coatings and Films,General Chemistry,Animal Science and Zoology,Statistics, Probability and Uncertainty,General Mathematics,Statistics and Probability,Psychiatry and Mental health,Applied Psychology,General Earth and Planetary Sciences,General Engineering,Education,Developmental and Educational Psychology,Education,Plant Science,Drug Discovery
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