Author:
MELIKYAN V.SH.,GHUKASYAN S.A.,HARUTYUNYAN S.S.,KOSTANYAN H.T,VOSKANYAN G.A.
Abstract
Nowadays CMOS technology feature size is being scaled aggressively. Supply voltage is not proportionally scaled, gate dielectric thickness is reduced and as a result, the devices are subjected to stronger electric fields, thereby causing stress on transistor. Stress causes aging degradation, which can lead to dramatic consequences on mobile devices, aircraft, military systems, or medical devices.
A method is proposed for designing two types of operational amplifiers with usage
of only thin oxide devices, which are protected from stress conditions, namely from aging
degradation. The proposed methods can also be implemented on other types of operational amplifiers.
Publisher
National Polytechnic University of Armenia
Subject
General Earth and Planetary Sciences,General Environmental Science,General Medicine,General Earth and Planetary Sciences,General Environmental Science,General Medicine,General Medicine,General Medicine,General Medicine,Rehabilitation,Physical Therapy, Sports Therapy and Rehabilitation,General Medicine,Geology,Ocean Engineering,Water Science and Technology,General Medicine
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