Engineering Epitaxial Silicene on Functional Substrates for Nanotechnology

Abstract

Two-dimensional materials are today a solid reality in condensed matter physics due to the disruptive discoveries about graphene. The class of the X-enes, namely, graphene-like single element artificial crystals, is quickly emerging driven by the high-momentum generated by silicene. Silicene, in addition to the graphene properties, shows up incidentally at the end of Moore’s law debate in the electronic era. Indeed, silicene occurs as the crafted shrunk version of silicon long yearned by device manufacturers to improve the performances of their chips. Despite the periodic table kinship with graphene, silicene and the X-enes must deal with the twofold problem of their metastable nature, i.e., the stabilization on a substrate and out of vacuum environment. Synthesis on different substrates and deep characterization through electronic and optical techniques of silicene in the early days have been now following by the tentative steps towards reliable integration of silicene into devices. Here, we review three paradigmatic cases of silicene grown by molecular beam epitaxy showing three different possible applications, aiming at extending the exploitation of silicene out of the nanoelectronics field and thus keeping silicon a key player in nanotechnology, just in a thinner fashion.