Black-Arsenic-Based Visible–Near-Infrared Photodetector

Abstract

Recently, black arsenic has joined the novel 2-dimensional van der Waals layered material family as a promising candidate for electronic and photonic applications owing to the tunable bandgap with layers, high carrier mobility, and anisotropic transport feature. To date, the extraordinary technological potential of black arsenic engineering nanophotoelectronic devices in the range from visible to near-infrared wavelength has not been reported. Here, we succeed in devising black arsenic visible–infrared detectors at the range from 520 to 1,550 nm, exhibiting a photoresponsivity of 0.4 A·W −1 and a detective of 1.37 × 10 8 Jones. Our studies underscore black arsenic as an emerging 2-dimensional van der Waals layered material for optoelectronic applications such as near-infrared sensing and imaging.