1. K.M. Benali, “First-Principles study of structural, elastic and electronic properties of AlN and GaN semiconductors under pressure effect and magnetism in AlN:Mn and GaN:Mn systems,” PhD. Thesis. Abou-bakrbelkaiduniversity – Tlemcen faculty of sciences- Physics department, 2004.
2. M. Ferhat, A.Zaoui, M.Certier and B. Khelifa, “ Empirical tight- binding band structure of zinc-blende nitrides GaN, AlN, and BN,” Phys. Stat. sol. (b) 195, 415,1996.
3. S. Berrah, H. Abid, A. Boukortt and M. Sehil, “Band gap of cubic AlN, GaNandInN compounds under pressure,” Turk J Phys. 30, 513-518, 2006.
4. S.K. Jalal, A.M. Al-Sheikh, R.H. Al-Saqa, “ High Pressure Effects on the Phonon Frequency Spectrum of Silicon Nanoparticle,” Iran J Sci Technol Trans Sci 45, 391–396 , 2021.
5. S. K. J, S. mawood, “Size dependent thermodynamic properties of nanoparticles, ” International Journal of Thermodynamics, Vol. 23 (No. 4), 245-250,2020.