Die Bonding of High Power 808 nm Laser Diodes With Nanosilver Paste

Author:

Yan Yi,Chen Xu1,Liu Xingsheng2,Mei Yunhui3,Lu Guo-Quan4

Affiliation:

1. School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, P.R. China e-mail:

2. State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an, Shaanxi, 710119, P.R. China; Xi'an Focuslight Technologies Co., Ltd., Xi'an, Shanxi, 710119, P.R. China

3. Tianjin Key Laboratory of Advanced Joining Technology, School of Materials Science and Engineering, Tianjin University, Tianjin, 710119, P.R. China

4. Tianjin Key Laboratory of Advanced Joining Technology, School of Materials Science and Engineering, Tianjin University, Tianjin, 710119, P.R. China; Department of Materials Science and Engineering, Virginia Tech, Blacksburg, VA 24061

Abstract

Conduction-cooled high power laser diodes have a variety of significant commercial, industrial, and military applications. For these devices to perform effectively, an appropriate die-attached material meeting specific requirements must be selected. In this study, nanosilver paste, a novel die-attached material, was used in packaging the 60 W 808 nm high power laser diodes. The properties of the laser diodes operating in the continuous wave (CW) mode, including the characteristics of power–current–voltage (LIV), spectrum, near field, far field, near field linearity, spatial spectrum, and thermal impedance, were determined. In addition, destructive tests, including the die shear test, scanning acoustic microscopy, and the thermal rollover test, were conducted to evaluate the reliability of the die bonding of the 60 W 808 nm high power semiconductor laser with nanosilver paste. Thermal analyses of the laser diodes operating at CW mode with different die-attached materials, indium solder, gold–tin solder and nanosilver paste, were conducted by finite element analysis (FEA). According to the result of the FEA, the nanosilver paste resulted in the lowest temperature in the laser diodes. The test results showed that the nanosilver paste was a very promising die-attached material in packaging high power semiconductor laser.

Publisher

ASME International

Subject

Electrical and Electronic Engineering,Computer Science Applications,Mechanics of Materials,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Liu, X., Hu, M. H., Caneau, C. G., Bhat, R., Hughes, L. C., and Zah, C.-E., 2004, “Thermal Management Stategies for High Power Semiconductor Pump Lasers,” IEEE 9th Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITHERM '04), Las Vegas, NV, June 1–4, pp. 493–500. 10.1109/ITHERM.2004.1318324

2. Rugi, E., Mueller, P., and Lambelet, P., 2003, “Scalable High Brightness Laser Pump for Aerospace Applications,” IEEELasers and Electro-Optics Europe, p. 81. 10.1109/CLEOE.2003.1312142

3. A Review on Die Attach Materials for SiC-Based High-Temperature Power Devices;Metall. Mater. Trans. B,2010

4. Testing Bond Quality by Measuring Thermal Resistance of Laser Diodes,2006

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