Coupled Electro-Thermal-Phase Change Modeling of a Chalcogenide Switch

Abstract

A coupled electro-thermal-phase change numerical model is developed to model the threshold and memory switching processes in a chalcogenide switch based on phase change memory (PCM) technology. Coupled electrical and thermal transport coupled to phase change and crystallization kinetics are solved. Charge transport has been implemented using simplified carrier continuity equations with a threshold switching model for electrical conductivity. Heat transfer is modeled using a Fourier model, accounting for latent heat through a fixed-grid enthalpy formulation. Phase change is modeled using the Johnson-Mehl equations for crystallization kinetics. Thermal conductivity and electrical resistivity changes due to phase change are modeled using a local percolation model. The charge transport and circuit equations are fully coupled with the heat transfer and phase change models to accurately simulate the switching process. SET and RESET pulses are simulated to demonstrate that the model is able to capture the underlying physics well.