3D Nonlinear Stress Analysis of Tin Whisker Initiation on Lead-Free Components

Author:

Lau John H.1,Pan Stephen H.2

Affiliation:

1. Agilent Technologies, Inc., 5301 Stevens Creek Boulevard, Santa Clara, CA 95052

2. Optimal Corporation, 6980 Santa Teresa Blvd, Suite 100, San Jose, CA 95119

Abstract

In this study, a three-dimensional (3D) nonlinear stress analysis of the tin whisker initiation on a pure matte Sn-plated copper substrate is investigated. The structure is subjected to a compressive stress acting at the Sn layer which is generated by the spontaneous chemical reaction of the Sn layer and the Sn5Cu6 layer. The Sn layer is assumed to be an elasto-plastic material. The results presented herein is useful in understanding why the compressive stress in the Sn layer can initiate a tin whisker near the weak spot of a SnOx layer.

Publisher

ASME International

Subject

Electrical and Electronic Engineering,Computer Science Applications,Mechanics of Materials,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Lau, J. H., 2000, Low Cost Flip Chip Technologies for DCA, WLCSP, and PBGA Assemblies, McGraw-Hill, New York.

2. Lau, J. H., Wong, C. P., Lee, N. C., and Lee, R., 2002, Electronics Manufacturing With Lead-Free, Halogen-Free, and Conductive Adhesive Materials, McGraw-Hill, New York.

3. Xu, Chen, Zhang, Y., Fan, C., and Abys, J., 2002, “Understand Whisker Phenomenon: The Driving Force for Whisker Formation,” www.circuitree.com, pp. 94–104.

4. Choi, W., Lee, T., Tu, K., Tamura, N., Celestre, R., MacDowell, A., Bong, Y., Nguyen, L., and Sheng, G., 2002, “Structure and Kinetics of Sn Whisker Growth on Pb-free Solder Finish,” Proceedings of Electronic Components and Technology Conference, pp. 628–633.

5. Kawanaka, R., Fujiwara, K., Nango, S., and Hasegawa, T., 1983, “Influence of Impurities on the Growth on Tin Whiskers,” Jpn. J. Appl. Phys., Part 1, 22, pp. 917–921.

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