Stable Cu-Based Back Contacts for CdTe Thin Film Photovoltaic Devices

Author:

Enzenroth R. A.1,Barth K. L.1,Sampath W. S.1,Manivannan V.1,Kirkpatrick A. T.1,Noronha P.2

Affiliation:

1. Department of Mechanical Engineering, Materials Engineering Laboratory, Colorado State University, Fort Collins, CO 80523

2. AVA Solar Inc., Fort Collins, CO 80523

Abstract

Cadmium telluride (CdTe) thin film photovoltaic devices fabricated in a-line process developed at Colorado State University (CSU) have shown stability during long-term (over a 5 year period) accelerated stress testing. These devices have a copper (Cu) containing back contact. The Cu profile as measured by secondary ion mass spectrometry characterization shows, for the maximum stressed device (23,399 h), that there is a significant (two times) change in the concentration of secondary Cu ions in the bulk of the material; however, the Cu concentration gradient at the back of the device has no significant change, and the CdS layer has no significant Cu concentration increase at open-circuit bias and 65°C temperature conditions. This indicates that with a proper CdCl2 treatment, Cu can be used to form the back contact for CdTe devices with acceptable stability. These devices have a projected field lifetime of greater than 60 years.

Publisher

ASME International

Subject

Energy Engineering and Power Technology,Renewable Energy, Sustainability and the Environment

Reference28 articles.

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5. Barth, K. L., Enzenroth, R. A., and Sampath, W. S., 2002, “Apparatus and Processes for the Mass Production of Photovoltaic Modules,” U.S. Patent No. 6,423,565 B1.

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