RIE-Texturing of Industrial Multicrystalline Silicon Solar Cells

Author:

Ruby Douglas S.1,Zaidi Saleem2,Narayanan S.3,Yamanaka Satoshi4,Balanga Ruben5

Affiliation:

1. Sandia National Laboratories,* Albuquerque, NM 87185-0752

2. Gratings Inc, Albuquerque NM 87107

3. BP Solar, Frederick, MD 21703

4. Ebara Solar Inc, Belle Vernon, PA 15012

5. Shell Solar, Camarillo, CA 93012

Abstract

We developed a maskless plasma texturing technique for multicrystalline Si (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 6% on tricrystalline Si cells.

Publisher

ASME International

Subject

Energy Engineering and Power Technology,Renewable Energy, Sustainability and the Environment

Reference4 articles.

1. Inomata, Y., Fukui, K., Shirasawa, K., 1997, “Surface Texturing of Large Area Multicrystalline Si Solar Cells Using Reactive Ion Etching Method,” Solar Energy Mat. Solar Cells, 48, Part II, pp. 237–242.

2. Ruby, D. S., Zaidi, S. H., and Narayanan, S., 2000, “Plasma-Texturization for Multicrystalline Silicon Solar Cells,” Twenty-Eighth IEEE PVSC, pp. 75–78.

3. Ruby, D. S., Zaidi, S. H., Damiani, B. M., and Rohatgi, A., 2001, “RIE-Texturing of Multicrystalline Silicon Solar Cells,” PVSEC-12, Jeju, Korea, pp. 273–274.

4. Basore, P. A., 1993 “Extended spectral analysis of IQE,” 23rd IEEE PV Specialists Conf., Louisville, pp. 147–152.

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