Finite Element Analysis on Soft-Pad Grinding of Wire-Sawn Silicon Wafers

Author:

Xin X. J.1,Pei Z. J.2,Liu Wenjie3

Affiliation:

1. Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506

2. Department of Industrial and Manufacturing Systems Engineering, Kansas State University, Manhattan, KS 66506

3. Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506

Abstract

Silicon is the primary semiconductor material used to fabricate microchips. The quality of microchips depends directly on the quality of starting silicon wafers. A series of processes are required to manufacture high quality silicon wafers. Surface grinding is one of the processes used to flatten the wire-sawn wafers. A major issue in grinding of wire-sawn wafers is the reduction and elimination of wire-sawing induced waviness. Several approaches (namely, combination of grinding and lapping, reduced chuck vacuum, soft-pad, and wax mounting) have been proposed to address this issue. Finite element analysis modeling of these approaches was conducted and the results were published earlier. It was shown that soft-pad grinding was a very promising approach since it was very effective in reducing the waviness and very easily adopted to conventional grinding environment. This paper presents a study of finite element analysis on soft-pad grinding of wire-sawn silicon wafers, covering the mechanisms of waviness reduction and the effects of pad material properties.

Publisher

ASME International

Subject

Electrical and Electronic Engineering,Computer Science Applications,Mechanics of Materials,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Van Zant, P., 2000, Microchip Fabrication, McGraw-Hill, New York.

2. Tricard, M., Kassir, S., Herron, P., and Pei, Z. J., 1998, “New Abrasive Trends in Manufacturing of Silicon Wafers,” Silicon Machining Symposium, American Society For Precision Engineering, April, St. Louis, Missouri.

3. Mozer, A. , 2000, “Plane Silicon Wafer Technology,” European Semiconductor, April, pp. 29–30.

4. Mcllvaine, B., 2002, “A Great 2000, Painful 2001, and Hope for Next Year,” website〈http://www.ebnonline.com〉.

5. Bawa, M. S., Petro, E. F., and Grimes, H. M., 1995, “Fracture Strength of Large Diameter Silicon Wafers,” Semicond. Int., November, pp. 115–118.

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