Molecular Dynamics Study of Laser and Plasma Nitriding of Titanium

Author:

Yu Hanjiang1,Tan Tianya,Wu Wei,Tian Chao,An Ying2,Sun Fengjiu3

Affiliation:

1. e-mail:

2. Liaoning Key Laboratory of Photoelectronic Devices and Detection Technology, Department of Physics, Liaoning University, Shenyang 110036, China

3. College of Sciences, Northeastern University, Shenyang 110004, China

Abstract

The molecular dynamics (MD) method is successfully applied to simulate the nitridation of titanium by the mixing technology with laser and plasma. Based on the simulation, the influence of the processing parameters, such as the laser power density and the scanning velocity on the effective thickness of the nitride layer, was investigated. It was found that, for each scanning velocity, there is a laser power density range within which the higher laser power density has the beneficial effect for nitriding treatment. Comparing the simulation and experimental results shows that the calculated results are in good qualitative agreement with the experimental results.

Publisher

ASME International

Subject

Industrial and Manufacturing Engineering,Computer Science Applications,Mechanical Engineering,Control and Systems Engineering

Reference18 articles.

1. Atomic Layer Epitaxy Growth of TiN Thin Films;J. Electrochem. Soc.,1995

2. Monomeric Titanium(IV) Azides as a New Route to Titanium Nitride;Inorg. Chem.,1997

3. Surface Chemistry and Film Growth During TiN Atomic Layer Deposition Using TDMAT and NH3;Thin Solid Films,2003

4. Katayama, S., Matsunawa, A., Morimoto, A., Ishimoto, S., and Arata, Y., 1983, Proceedings of the 5th International Conference on Applied Laser Electro-Optics, Laser Institute of America, p. 127.

5. Laser Nitriding of Metals;Prog. Mater. Sci.,2002

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