Degradation of Silicon Carbide in Combustion Gas Flow at High-Temperature and Speed

Abstract

Effects of various basic factors of combustion gas flow conditions on degradation behaviors of silicon carbide have been experimentally determined. The exposure tests were performed for widely varied experimental parameters of the gas temperatures (T = 900–1500°C), pressure (P = 0.3–0.8MPa), gas flow rate (V = 50–250m/s), water vapor partial pressure (PH2O = 32–82kPa) and oxygen partial pressure (PO2 = 24–44kPa). Degradation behaviors of silicon carbide were expressed as the weight loss of the substrate. The weight loss rate depends on the water vapor partial pressure remarkably. The effect of the oxygen partial pressure on the weight loss was smaller than that of the water vapor partial pressure, and the weight loss decreased with the increase of the oxygen partial pressure. Considering the effects of partial pressures of oxygen and water vapor, the gas temperature and the pressure didn’t have much effect on the weight loss. The weight loss depends on the gas flow rate, the increase rate of the weight loss for the gas flow rate becomes small with the gas flow rate. Consequently, the water vapor partial pressure, the oxygen partial pressure, the gas temperature, the pressure and the gas flow rate dependence of the weight loss rate is expressed as PH2O1.9 V0.6 P0.3 / PO20.6.