Measurement of Wafer Surface Using Shadow Moire´ Technique With Talbot Effect

Author:

Wei S.1,Wu S.1,Kao I.1,Chiang F. P.1

Affiliation:

1. Department of Mechanical Engineering, SUNY at Stony Brook, Stony Brook, NY 11794-2300

Abstract

In this paper, a modified shadow moire´ technique is applied to measure surface topology of wafers. When a wafer is sliced, either by an inner-diameter (ID) saw or wiresaw, the surface needs to be measured to ensure the consistency of quality. Two important characteristics of the wafer surface measurements are the warpage and total thickness variation (TTV). Currently, the most commonly used method of wafer measurement employs a pair of capacitive measuring probes which sample points on the surface of a rotating wafer to obtain the contours of surface. Many sampling points on the surface are needed for more accurate measurements; however, this will require more time for the inspection of wafers during production. An innovative alternative for full-field, whole-wafer measurement is developed using a laser light source and the modified shadow moire´ technique. This methodology enables one to examine the whole wafer surface quickly and simultaneously. In this study, a 40 lines/mm (1000 lines/inch) reference grating is employed as the standard to create a shadow moire´ pattern. In addition, the Talbot effect is utilized to adjust the gap, or the so-called Talbot distance, between the grating and the wafer surface such that a fringe pattern of good quality can be obtained. By using the phase shifting technique, the resolution (or sensitivity) can be enhanced by two order of magnitude. The results show that not only the full view of the whole wafer surface can be obtained, but enhanced surface resolution and accuracy can also be realized. In addition, warpage due to excessive residual stresses can be observed distinctly with fringe patterns because of the global and interconnected moire´ fringes. This process is faster, especially when dealing with wafers with diameter larger than 200 mm (8”). Experimental results of both 200 mm single crystalline and 100 × 90 mm polycrystalline wafers are presented. The system can also be fully automated to become an on-line inspection tool.

Publisher

ASME International

Subject

Electrical and Electronic Engineering,Computer Science Applications,Mechanics of Materials,Electronic, Optical and Magnetic Materials

Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effect of random grating pit displacements on the Talbot image;Journal of the Optical Society of America B;2022-03-11

2. 150 GHz single shot ultrafast imaging spectroscopy based on femtosecond laser;Proceedings of the 2022 Conference on Lasers and Electro-Optics Pacific Rim;2022

3. Wafer Metrology and Optical Techniques;Wafer Manufacturing;2021-01-09

4. Wafers and Semiconductors;Wafer Manufacturing;2021-01-09

5. Wavelength alteration measurement using the Moiré technique;Optics Letters;2017-10-18

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3