Nonlinear Electro-Thermal Monte Carlo Device Simulation

Author:

Merrill Ky1,Saraniti Marco1

Affiliation:

1. School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ 85287-5706

Abstract

Abstract A model of self-heating is incorporated into a cellular Monte Carlo (CMC) particle device simulator. This is done through the solution of an energy balance equation (EBE) for phonons, which self-consistently couples charge and heat transport in the simulation. First, several tests are performed to verify the applicability and accuracy of the proposed nonlinear iterative solver in the presence of convective boundary conditions, as compared to a finite element analysis (FEA) solver as well as using the Kirchhoff Transformation. Finally, a fully coupled electro-thermal characterization of a GaN/AlGaN high electron mobility transistor (HEMT) is performed, and the effects of nonideal interfaces and boundary conditions are studied.

Funder

Air Force Office of Scientific Research

Publisher

ASME International

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Assessment of T-Gate and Π-Gate HEMT Through Cellular Monte Carlo Simulations;IEEE Transactions on Electron Devices;2023-12

2. Near-junction microfluidic cooling for GaN HEMT with capped diamond heat spreader;International Journal of Heat and Mass Transfer;2022-05

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