Point-Contact Bonding of Integrated Three-Dimensional Manifold Microchannel Cooling Within Direct Bonded Copper Platform

Author:

Lin Yujui1,Wei Tiwei23,Moy Wyatt Jason1,Chen Hao4,Gupta Man Prakash5,Degner Michael5,Asheghi Mehdi1,Mantooth H. Alan4,Goodson Kenneth E.1

Affiliation:

1. Department of Mechanical Engineering, Stanford University , Stanford, CA 94305

2. Department of Mechanical Engineering, Stanford University , Stanford, CA 94305 ; , West Lafayette, IN 47907

3. School of Mechanical Engineering, Purdue University , Stanford, CA 94305 ; , West Lafayette, IN 47907

4. Department of Electrical Engineering, University of Arkansas , Fayetteville, AR 72701

5. Research and Advanced Engineering, Ford Motor Company , Dearborn, MI 48124

Abstract

Abstract A microchannel heat sink integrated with a three-dimensional manifold using direct bonded copper (DBC) is promising for high power density electronics due to the combination of low thermal resistance and reduced pressure drop. However, this requires much progress on the fabrication and high-quality point-contact bonding processes of the microchannel substrate and three-dimensional manifold DBCs. In this study, we have developed processing techniques for surface preparations and high-quality point-contact solder bonding between the two DBC substrates. We utilized chemical polishing followed by electroless plating to prevent excess solder from blocking the microchannels. We performed a parametric study to investigate the impact of bonding time and surface roughness on the tensile strength of the bonding interface. The bonding strength increased from 1.8 MPa to 2.3 MPa as the bonding time increased from 10 to 30 min while reducing the surface roughness from Rz = 0.21 to 0.05 μm, resulting in increasing the bonding strength from 0.16 MPa to 2.07 MPa. We successfully tested the microcooler up to the inlet pressure of 70 kPa and pressure drop of 30 kPa, which translates to the tensile strength at the bonding point contacts, which remains well below the 2.30 MPa. We achieved the junction-to-coolant thermal resistance of 0.2 cm2 K/W at chip heat flux of 590 W/cm2. Thus, our study provides an important proof-of-concept demonstration toward enabling high power density modules for power conversion applications.

Publisher

ASME International

Subject

Electrical and Electronic Engineering,Computer Science Applications,Mechanics of Materials,Electronic, Optical and Magnetic Materials

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