Preparation and Investigation of p-GaAs/n-Cd1-xZnxS1-yTey Heterojunctions Deposited by Electrochemical Deposition

Author:

Mamedov Huseyn M.1,Konya Zoltan2,Muradov Mustafa B.3,Kukovecz Akos2,Kordas Krisztian4,Hashim Daniel P.5,Mamedov Vusal U.1

Affiliation:

1. Faculty of Physics, Department of Physical Electronics, Baku State University, Z.Khalilov street, 23, Baku Az1148, Azerbaijan e-mail:

2. Department of Applied and Environmental Chemistry, University of Szeged, H-6720 Szeged, Rerrich Bela ter 1., Hungary e-mail:

3. Faculty of Physics, Nanomaterials Laboratory, Baku State University, Z.Khalilov street, 23, Baku Az1148, Azerbaijan e-mail:

4. Microelectronics and Materials Physics Laboratories, University of Oulu, P.O. Box 8000FI-90014, Oulu, Finland e-mail:

5. Department of Mechanical Engineering and Materials Science, Rice University, 6100 Main Street, MS-321, Houston, TX 77005 e-mail:

Abstract

Anisotype heterojunctions of p-GaAs/n-Cd1-xZnxS1-yTey have been fabricated by preparing n-type Cd1-xZnxS1-yTey thin films onto p-GaAs single crystal wafers using an electrochemical deposition method. The voltammetric behavior of the Cd1-xZnxS1-yTey thin films on GaAs substrates from aqueous solutions was studied. Electrical and photoelectrical properties of heterojunctions were studied depending on the Cd1-xZnxS1-yTey films composition (x = 0.1 ÷ 0.8; y = 0.2; 0.4; 0.9) and heat treatment (HT) regime in argon atmosphere (100–450 °С during 3–16 min). Under AM1.5 conditions, the open-circuit voltage, short-circuit current, fill factor, and efficiency of our best cell, was Voc = 584 mV, Jsc = 14.54 mA/cm2, FF = 0.6, and η = 6.7%, respectively.

Publisher

ASME International

Subject

Energy Engineering and Power Technology,Renewable Energy, Sustainability and the Environment

Reference20 articles.

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3. Investigation of Electrodeposited Glass/SnO2/CuInSe2/Cd1-xZnxS1-ySey/ZnO Thin Solar Cells;Jpn. J. Appl. Phys.,2007

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5. Heat Treatment Effects in In2O3/Cd0.4Zn0.6S0.9Se0.1/CdTe Heterojunction Solar Cells,2007

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