Warpage Measurement on Dielectric Rough Surfaces of Microelectronics Devices by Far Infrared Fizeau Interferometry1

Author:

Verma K.1,Han B.2

Affiliation:

1. Lucent Technologies, 9999 Hamilton Blvd., Breinigsville, PA 18031

2. Department of Mechanical Engineering, University of Maryland, College Partk, MD 20742

Abstract

Far infrared Fizeau interferometry is developed and it is proposed as a tool for warpage measurement of microelectronics devices. The method provides a whole-field map of surface topography with a basic measurement sensitivity of 5.31 μm per fringe contour. The method is implemented by a compact apparatus using a computer controlled environmental chamber for real-time measurement. The method retains the simplicity of classical interferometry while providing wide applicability to dielectric rough surfaces. Roughness tolerance is achieved by utilizing a far infrared light (λ=10.6 μm). The detailed optical and mechanical configuration is described and selected applications are presented to demonstrate the applicability. The unique advantages of the method are discussed. [S1043-7398(00)01303-7]

Publisher

ASME International

Subject

Electrical and Electronic Engineering,Computer Science Applications,Mechanics of Materials,Electronic, Optical and Magnetic Materials

Reference17 articles.

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3. Guo, Y., 1995, “Applications of Shadow Moire´ Method in Determination of Thermal Deformations in Electronic Packaging,” Proceedings of the 1995 SEM Spring Conference, Grand Rapids, MI.

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