Observation of Femtosecond Laser-Induced Ablation in Crystalline Silicon
Author:
Affiliation:
1. Institute of Energy Technology, Swiss Federal Institute of Technology Zurich, Zurich, CH-8092 Switzerland
2. Department of Mechanical Engineering, University of California, Berkeley, Berkeley, CA 94720-1740
Abstract
Publisher
ASME International
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
http://asmedigitalcollection.asme.org/heattransfer/article-pdf/126/5/723/5913808/723_1.pdf
Reference29 articles.
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2. Tom, H. W. K., Aumiller, G. D., and Brito-Cruz, C. H., 1988, “Time-Resolved Study of Laser-Induced Disorder of Si Surfaces,” Phys. Rev. Lett., 60, pp. 1438–1441.
3. Downer, M. C., Fork, R. L., and Shank, C. V., 1985, “Femtosecond Imaging of Melting and Evaporation at a Photoexcited Silicon Surface,” J. Opt. Soc. Am. B, 2, pp. 595–599.
4. Guidotti, D., Driscoll, T. A., and Gerritsen, H. J., 1983, “Second Harmonic Generation in Centro-Symmetric Semiconductors,” Solid State Commun., 46, pp. 337–340.
5. Stampfli, P., and Bennemann, K. H., 1990, “Theory for the Instability of the Diamond Structure of Si, Ge, and C Induced by a Dense Electron-Hole Plasma,” Phys. Rev. B, 42, pp. 7163–7173.
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