A Numerical Simulation Study on the Effects of Crucible Rotation and Magnetic Fields in Growth of SiGe by the Traveling Heater Method

Author:

Takagi Youhei1,Okano Yasunori1,Dost Sadik2

Affiliation:

1. Division of Chemical Engineering,Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan

2. Crystal Growth Laboratory, University of Victoria, Victoria, BC, Canada V8W 3P6

Abstract

A numerical simulation study was carried out to shed light on the effects of applied crucible rotation and static magnetic field during the traveling heater method growth of bulk SiGe single crystals. The simulation results show that the application of crucible rotation weakens the radial silicon concentration gradient due to the effect of centrifugal force. The effects of applied static magnetic field direction and strength on the concentration field in the melt were also studied. It was found that the simultaneous application of crucible rotation and static magnetic field is best to grow large crystals with uniform composition. An optimum combination of crucible rotation rates and applied magnetic field strengths is determined.

Publisher

ASME International

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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