Finite Element Modelling of Flip Chip Gold-Gold Thermocompression Bonding
Author:
Puigcorbe´ J.1, Marco S.1, Leseduarte S.1, Carmona M.1, Vendier O.2, Devron C.2, Delage S. L.3, Floriot D.3, Blanck H.4
Affiliation:
1. Sistemes d’Instrumentacio´ i Comunicacions, Departament d’Electro`nica, Universitat de Barcelona, Martı´ i Franque`s 1, 08028-Barcelona, Spain 2. Alcatel Space Industries, 26 Avenue JF Champollion BP1187, 31037-Tolouse, France 3. Thomson-CSF, Domaine de Corbeville, 91404 Orsay, France 4. UMS GmbH, 11 Wilhem Runge Strasse, D-89081-Ulm, Germany
Abstract
The gold-gold thermocompression process for power heterostructure bipolar transistor (HBT) flip chip has been modelled and simulated by finite element method. A model for plated gold creep has been determined on the basis of empirical data and model comparison. This model seems suited for gold-gold thermocompression process optimization.
Publisher
ASME International
Subject
Electrical and Electronic Engineering,Computer Science Applications,Mechanics of Materials,Electronic, Optical and Magnetic Materials
Reference15 articles.
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