Diameter-Controlled Czochralski Growth of Silicon Crystals-Reference-Cited by-同舟云学术

Diameter-Controlled Czochralski Growth of Silicon Crystals

Published:1998-11-01 Issue:4 Volume:120 Page:874-882
ISSN:0022-1481
Container-title:Journal of Heat Transfer
language:en
Short-container-title:

Author:

Zhang H.¹,Zheng L. L.²,Prasad V.¹,Larson D. J.²

Affiliation:

1. Department of Mechanical Engineering, State University of New York, Stony Brook, NY 11794-2300

2. Department of Materials Science and Engineering, State University of New York, Stony Brook, NY 11794-2275

Abstract

A thermal-capillary dynamic model for Czochralski (Cz) growth of silicon single crystal is presented that accounts for convection in the melt, conduction in the crystal, and radiation from the melt free surface and crystal. The shapes of the crystal/melt interface, moving crystal, and free surface are governed by the balance of energy and stresses. Decrease of the melt volume as the crystal is grown is also considered. A control algorithm based on the adjustment of the pull rate and/or crucible wall temperature has been developed. The diameter of the crystal can remain constant or vary with time based on the strategies implemented to control the growth process.

Publisher

ASME International

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

http://asmedigitalcollection.asme.org/heattransfer/article-pdf/120/4/874/5577450/874_1.pdf

Reference32 articles.

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3. Brown, R. A., 1986, “Interactions between Convection, Segregation and Interface Morphology,” Advanced Crystal Growth, Prentice-Hall, Englewood Cliffs, NJ, pp. 3–94.

4. Derby J. J. , and BrownR. A., 1986, “Thermal-Capillary Analysis of Czochralski and Liquid Encapsulated Czochralski Crystal Growth II. Processing Strategies,” Journal of Crystal Growth, Vol. 74, pp. 604–624.

5. Derby J. J. , and BrownR. A., 1987, “On the Dynamics of Czochralski Crystal Growth,” Journal of Crystal Growth, Vol. 83, pp. 137–151.

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