A Study on Electrical Reliability Criterion on Through Silicon Via Packaging
Author:
Lwo Ben-Je1, Tseng Kuo-Hao2, Tseng Kun-Fu3
Affiliation:
1. Department of Mechanical and Aerospace Engineering, Chung-Cheng Institute of Technology, National Defense University, Tao-Yuan 335, Taiwan e-mail: 2. Department of Mechanical and Aerospace Engineering, Chung-Cheng Institute of Technology, National Defense University, Tao-Yuan 335, Taiwan 3. Department of Multimedia and Game Science, Asia-Pacific Institute of Creativity, Miao-Li 351, Taiwan
Abstract
Three-dimensional (3D) structure with through silicon via (TSV) technology is emerging as a key issue in microelectronic packaging industry, and electrical reliability has become one of the main technical subjects for the TSV designs. However, criteria used for TSV reliability tests have not been consistent in the literature, so that the criterion itself becomes a technical argument. To this end, this paper first performed several different reliability tests on the testing packaging with TSV chains, then statistically analyzed the experimental data with different failure criteria on resistance increasing, and finally constructed the Weibull failure curves with parameter extractions. After comparing the results, it is suggested that using different criteria may lead to the same failure mode on Weibull analyses, and 65% of failed devices are recommended as a suitable termination for reliability tests.
Publisher
ASME International
Subject
Electrical and Electronic Engineering,Computer Science Applications,Mechanics of Materials,Electronic, Optical and Magnetic Materials
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