Affiliation:
1. Department of Electronics Research, Toyota Research Institute of North America, 1555 Woodridge Avenue, Ann Abor, MI 48105
Abstract
Abstract
This paper demonstrates the concept and fabrication process for a novel (copper, nickel)–tin, (Cu, Ni)–Sn, transient liquid phase (TLP) high-temperature bond that exploits the addition of a pure aluminum (Al) core layer for die attachment in a power electronics power card structure. The bond quality and composition of the bond layer are characterized using confocal scanning acoustic microscopy (CSAM), scanning electron microscopy (SEM), and energy-dispersive X-ray (EDX). The experimental results indicate that the material composition and established fabrication process enable a crack-free bond that exhibits a void fraction of 2% or less. Compared to a traditional foil-based single-layer TLP bonding system, the proposed foil-based TLP/metal laminated structure displays ∼60% reduction in thermally induced mechanical stress built-in after fabrication, as verified through steady-state thermal stress simulations.
Subject
Electrical and Electronic Engineering,Computer Science Applications,Mechanics of Materials,Electronic, Optical and Magnetic Materials
Reference40 articles.
1. Assembly and Packaging Technologies for High-Temperature and High-Power GaN Devices;IEEE Trans. Compon., Packag. Manuf. Technol.,2015
2. Silicon-Carbide (SiC) Semiconductor Power Electronics for Extreme High-Temperature Environments,2004
3. Overview of Silicon Carbide Power Devices,2017
4. Power Semiconductor Device Figure of Merit for High-Frequency Applications;IEEE Electron Device Lett.,1989
Cited by
11 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献