Formation of Mg-Si Thin Film Deposited by Ion Beam Sputtering-Reference-Cited by-同舟云学术

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Formation of Mg-Si Thin Film Deposited by Ion Beam Sputtering

Published:2005 Issue:1 Volume:69 Page:31-35
ISSN:0021-4876
Container-title:Journal of the Japan Institute of Metals
language:ja
Short-container-title:J. Japan Inst. Metals

Author:

Serikawa Tadashi,Henmi Momoko,Yamaguchi Takashi,Oginuma Hideki,Kondoh Katsuyoshi

Publisher

Japan Institute of Metals

Subject

Materials Chemistry,Metals and Alloys,Mechanics of Materials,Condensed Matter Physics

Link

https://www.jstage.jst.go.jp/article/jinstmet/69/1/69_1_31/_pdf

Reference21 articles.

1. Valence bands of theMg2X(X=Si, Ge, Sn)semiconducting compounds

2. Thin film growth of semiconducting Mg2Si by codeposition

3. SemiconductingMg2Si thin films prepared by molecular-beam epitaxy

4. Contact resistivity of some magnesium/silicon and magnesium silicide/silicon structures

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of annealing on the formation of Mg2Si film prepared by resistive thermal evaporation method;Journal of Materials Science: Materials in Electronics;2013-06-07

2. Annealing effects on the formation of semiconducting Mg2Si film using magnetron sputtering deposition;Journal of Semiconductors;2011-08

3. Effects of magnesium film thickness and annealing temperature on formation of Mg2Si films on silicon (111) substrate deposited by magnetron sputtering;Applied Surface Science;2011-06

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