Magnetoresistance Effect of Magnetic Tunnel Junction with Co2Ti0.5Mn0.5Al Full-Heusler Alloy Thin Film-Reference-Cited by-同舟云学术

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Magnetoresistance Effect of Magnetic Tunnel Junction with Co2Ti0.5Mn0.5Al Full-Heusler Alloy Thin Film

Published:2009 Issue:9 Volume:73 Page:670-673
ISSN:1880-6880
Container-title:Journal of the Japan Institute of Metals
language:ja
Short-container-title:J. Japan Inst. Metals

Author:

Sasaki Akihiro,Tezuka Nobuki,Sugimoto Satoshi,Okubo Akinari,Umetsu Rie,Kainuma Ryosuke

Publisher

Japan Institute of Metals

Subject

Materials Chemistry,Metals and Alloys,Mechanics of Materials,Condensed Matter Physics

Link

https://www.jstage.jst.go.jp/article/jinstmet/73/9/73_9_670/_pdf

Reference15 articles.

1. Tunneling between ferromagnetic films

2. Slater-Pauling behavior and origin of the half-metallicity of the full-Heusler alloys

3. Atomic disorder effects on half-metallicity of the full-Heusler alloysCo2(Cr1−xFex)Al:A first-principles study

4. Structural and magnetic properties and tunnel magnetoresistance for Co2(Cr,Fe)Al and Co2FeSi full-Heusler alloys

5. Tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy thin film of Co2Cr0.6Fe0.4Al and a MgO tunnel barrier

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