Preparation of Si<SUB>3</SUB>N<SUB>4</SUB> by Chemical Vapor Deposition (Effects of Raw Gas Flow Rate)-Reference-Cited by-同舟云学术

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Preparation of Si₃N₄ by Chemical Vapor Deposition (Effects of Raw Gas Flow Rate)

Published:1977 Issue:4 Volume:41 Page:358-367
ISSN:0021-4876
Container-title:Journal of the Japan Institute of Metals
language:en
Short-container-title:J. Japan Inst. Metals and Materials

Author:

Hirai Toshio¹,Niihara Koichi¹,Goto Takashi²

Affiliation:

1. The Research Institute for Iron, Steel and Other Metals, Tohoku University

2. Graduate School, Tohoku University

Publisher

Japan Institute of Metals

Subject

Materials Chemistry,Metals and Alloys,Mechanics of Materials,Condensed Matter Physics

Link

https://www.jstage.jst.go.jp/article/jinstmet1952/41/4/41_4_358/_pdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical Vapor Deposition of Structural Ceramics and Composites;Ceramics and Composites Processing Methods;2012-04-06

2. Nano-Structure of YSZ Films Prepared by Laser CVD;Journal of the Japan Institute of Metals;2005

3. Chemical vapour deposition of Si3N4 from a gas mixture of Si2Cl6, NH3 and H2;Journal of Materials Science;1986-11

4. CVD of Si3N4 and Its Composites;Emergent Process Methods for High-Technology Ceramics;1984

5. Preparation and some properties of chemically vapour-deposited Si3N4-TiN composite;Journal of Materials Science;1982-05

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