Formation of Through-Silicon-Vias Using Pressure Infiltration of Molten Tin-Reference-Cited by-同舟云学术

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Formation of Through-Silicon-Vias Using Pressure Infiltration of Molten Tin

Published:2012 Issue:10 Volume:53 Page:1810-1815
ISSN:1345-9678
Container-title:MATERIALS TRANSACTIONS
language:en
Short-container-title:Mater. Trans.

Author:

Kim Min-Young¹,Kim Sung-Kyu¹,Oh Tae-Sung¹

Affiliation:

1. Department of Materials Science and Engineering, Hongik University

Publisher

Japan Institute of Metals

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/matertrans/53/10/53_M2012158/_pdf

Reference21 articles.

1. 1) J. H. Lau: Proc. 60th Electron. Comp. Technol. Conf., (IEEE, 2010) pp. 1031–1042.

2. 2) D. M. Jang, C. Ryu, K. Y. Lee, B. H. Cho, J. Kim, T. S. Oh, W. J. Lee and J. Yu: Proc. 57th Electron. Comp. Technol. Conf., (IEEE, 2007) pp. 847–852.

3. 3) K. W. Lee, T. Oh, J. H. Lee and T. S. Oh: J. Electron. Mater. 36 (2007) 123–128.

4. 4) Y. K. Jee, J. Yu, K. W. Park and T. S. Oh: J. Electron. Mater. 38 (2009) 685–690.

5. 5) M. J. Wolf, T. Dretcshkow, B. Wunderle, N. Jurgensen, G. Engelmann, O. Ehrmann, A. Uhlig, B. Michel and H. Reichl: Proc. 58th Electron. Comp. Technol. Conf., (IEEE, 2008) pp. 563–570.

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