The Effects of Crystallization on Mechanical Mechanism and Residual Stress of Sputtered Ag Thin Films-Reference-Cited by-同舟云学术

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The Effects of Crystallization on Mechanical Mechanism and Residual Stress of Sputtered Ag Thin Films

Published:2012 Issue:11 Volume:53 Page:2049-2055
ISSN:1345-9678
Container-title:MATERIALS TRANSACTIONS
language:en
Short-container-title:Mater. Trans.

Author:

Hung F. Y.¹,Lui T. S.¹,Hu Z. S.²,Chang S. J.²,Chen L. H.¹,Chen K. J.³

Affiliation:

1. Department of Materials Science and Engineering, Center for Micro/Nano Science and Engineering, National Cheng Kung University

2. Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University

3. The Instrument Center, National Cheng Kung University

Publisher

Japan Institute of Metals

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/matertrans/53/11/53_M2012199/_pdf

Reference29 articles.

1. 1) W. Wu, S. H. Brongersma, M. Van Hove and K. Maex: Appl. Phys. Lett. 84 (2004) 2838–2840.

2. 2) D. Lide: CRC Handbook of Chemistry and Physics, 84th ed., (CRC, 2003) pp. 12–45.

3. 3) S. H. Lee and J. K. Park: Appl. Surf. Sci. 253 (2007) 9112–9115.

4. 4) S. Ding, X. Wang, D. J. Chen and Q. Q. Wang: Optics Express 14 (2006) 1541–1546.

5. 5) A. K. Kalkan and S. J. Fonash: J. Phys. Chem. B 109 (2005) 20779–20785.

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1. Nanocrystalline Ag–Cu–Al Alloy thin films with densely dispersed alumina particles prepared using reactive sputtering method with Ar–O2 mixed gas;Materialia;2023-08

2. Effect of driving frequency on the structure of silicon grown on Ag (111) films by very-high-frequency magnetron sputtering;Chinese Physics B;2017-06

3. Effects of oxygen partial pressure and annealing temperature on the residual stress of hafnium oxide thin-films on silicon using synchrotron-based grazing incidence X-ray diffraction;Applied Surface Science;2016-10

4. Characterization and Functional Applications of Nanoporous Ag Foams Prepared by Chemical Dealloying;Metallurgical and Materials Transactions B;2015-06-16

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