Effect of Rapid Thermal Annealing on the Electrical and Structural Properties of Se Schottky Contacts to n-Type Si
Author:
Affiliation:
1. Department of BIN Fusion Technology, Chonbuk National University
2. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University
3. Department of Physics, Sri Venkateswara University
Publisher
Japan Institute of Metals
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.jstage.jst.go.jp/article/matertrans/54/7/54_M2013075/_pdf
Reference29 articles.
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3. 3) M. H. Yang, K. B. K. Teo, W. I. Milne and D. G. Hasko: Appl. Phys. Lett. 87 (2005) 253116.
4. 4) J. Singh: Semiconductor Devices: Basic Principles, (Wiley, New York, 2001).
5. 5) D. Kahng: Bell Syst. Tech. J. 43 (1964) 215–224.
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