Convergent-Beam Electron Diffraction for Local Lattice Parameters in III-V Semiconductors-Reference-Cited by-同舟云学术

Convergent-Beam Electron Diffraction for Local Lattice Parameters in III-V Semiconductors

Published:1990 Issue:7 Volume:31 Page:641-646
ISSN:0916-1821
Container-title:Materials Transactions, JIM
language:en
Short-container-title:Mater. Trans., JIM

Author:

Tomokiyo Y.¹,Okuyama T.²,Matsumura S.²,Kuwano N.²,Oki K.²

Affiliation:

1. HVEM Laboratory, Kyushu University

2. Department of Materials Science and Technology, Graduate School of Engineering Sciences, Kyushu University

Publisher

Japan Institute of Metals

Subject

General Engineering

Link

https://www.jstage.jst.go.jp/article/matertrans1989/31/7/31_7_641/_pdf

Reference16 articles.

1. 1) H. Matsuhata, Y. Tomokiyo and T. Eguchi: Acta Cryst., B40 (1984), 544.

2. 2) T. Eguchi, Y. Tomokiyo and H. Matsuhata: J. Microsc. Spectrosc. Electron., 12 (1987), 559.

3. 3) S. Matsumura, Y. Tomokiyo and K. Oki: J. Electron Microscopy Technique, 12 (1989), 262.

4. 4) J. W. Steeds: Convergent beam electron diffraction, Introduction to Analytical Electron Microscopy, Eds. by J. J. Hren, J. I. Goldstein and D. Joy: Plenum, New York, (1979), p. 387.

5. 5) M. Tanaka, M. Terauchi and T. Kaneyama: Convergent-Beam Electron Diffraction II, JEOL-MARUZEN, Tokyo, (1988), p. 226.

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