Effect of Impurities on Growth of Ti Silicides in Bulk Ti/Si Diffusion Couple-Reference-Cited by-同舟云学术

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Effect of Impurities on Growth of Ti Silicides in Bulk Ti/Si Diffusion Couple

Published:1997 Issue:10 Volume:38 Page:865-870
ISSN:0916-1821
Container-title:Materials Transactions, JIM
language:en
Short-container-title:Mater. Trans., JIM

Author:

Shimozaki Toshitada¹,Okino Takahisa²,Yamane Masahiro³,Wakamatsu Yoshinori³,Onishi Masami⁴

Affiliation:

1. The Center for Instrumental Analysis, Kyushu Institute of Technology

2. College of Liberal Arts and Sciences, Nippon Bunri University

3. Department of Materials Science and Engineering, Kyushu Institute of Technology

4. Department of Materials Science and Engineering, Chang-won National University

Publisher

Japan Institute of Metals

Subject

General Engineering

Link

https://www.jstage.jst.go.jp/article/matertrans1989/38/10/38_10_865/_pdf

Reference14 articles.

1. 1) H. Kato and Y. Nakamura: Thin Solid Films, 34 (1976), 135.

2. 2) R. W. Bower and J. W. Mayer: Appl. Phys. Lett., 29 (1972), 359.

3. 3) W. K. Chu, S. S. Lau, J. W. Mayer and H. Muller and K. N. Tu: Thin Solid Films, 25 (1975), 393.

4. 4) S. P. Murarka and D. B. Fraser: J. Appl. Phys., 51 (1980), 342.

5. 5) T. Shimozaki, K. Chikumaru, Y. Wakamatsu and M. Onishi: J. Japan Inst. Metals, 60 (1996), 29.

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