High-Temperature Oxidation of Silicon Carbide and Silicon Nitride-Reference-Cited by-同舟云学术

High-Temperature Oxidation of Silicon Carbide and Silicon Nitride

Published:1997 Issue:10 Volume:38 Page:821-835
ISSN:0916-1821
Container-title:Materials Transactions, JIM
language:en
Short-container-title:Mater. Trans., JIM

Author:

Narushima T.¹,Goto T.²,Hirai T.²,Iguchi Y.¹

Affiliation:

1. Department of Metallurgy, Faculty of Engineering, Tohoku University

2. Institute for Materials Research, Tohoku University

Publisher

Japan Institute of Metals

Subject

General Engineering

Link

https://www.jstage.jst.go.jp/article/matertrans1989/38/10/38_10_821/_pdf

Reference143 articles.

1. 1) K. Komeya: Bull. Ceram. Soc. Jpn., 25 (1990), 35.

2. 2) R. W. Ohnsorg and M. O. Ten Eyck: Silicon Carbide 1987, Ed. by J. D. Cawley and C. E. Semier, Am. Ceram. Soc., Westerville, OH, (1989), p. 367.

3. 3) Y. Naruse and T. Hatta: Bull. Ceram. Soc. Jpn., 18 (1983), 42.

4. 4) S. Y. Dapkunas: Ceramic Bull., 67 (1988), 388.

5. 5) J. W. MacBeth: Ceramic Bull., 71 (1992), 174.

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