Control of Oxygen-Atom Transport in Silicon Melt during Crystal Growth by Electromagnetic Force-Reference-Cited by-同舟云学术

Control of Oxygen-Atom Transport in Silicon Melt during Crystal Growth by Electromagnetic Force

Published:2000 Issue:8 Volume:41 Page:1013-1018
ISSN:0916-1821
Container-title:Materials Transactions, JIM
language:en
Short-container-title:Mater. Trans., JIM

Author:

Watanabe Masahito¹,Wang Wei¹,Eguchi Minoru¹,Hibiya Taketoshi¹

Affiliation:

1. Fundamental Research Laboratories, NEC Corporation

Publisher

Japan Institute of Metals

Subject

General Engineering

Link

https://www.jstage.jst.go.jp/article/matertrans1989/41/8/41_8_1013/_pdf

Reference12 articles.

1. 1) K. Takada, H. Yamagishi, H. Minami and M. Imai: Semiconductor Silicon 1998, eds. by H. Huff, U. Gösele and H. Tsuya, The Electrochem. Soc., Pennington, (1998), pp. 376–395.

2. 2) K. Hoshi, N. Isawa, T. Suzuki and Y. Ohkubo: J. Electrochem. Soc., 132 (1985), 693–700.

3. 3) K. Hoshikawa, H. Kohda and H. Hirata: Jpn. J. Appl. Phys., 23 (1984), L37–L39.

4. 4) H. Hirata and K. Hoshikawa: J. Cryst. Growth, 96 (1989), 747–755.

5. 5) M. Watanabe, M. Eguchi and T. Hibiya: J. Cryst. Growth, 193 (1998), 402–412.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Relationship of Free Surface Area with Oxygen Concentration in Silicon Ingot Grown by Czochralski Method for High Efficiency Solar Cells;Journal of the Korean Physical Society;2020-11-20

2. Influence of relative distance between heater and quartz crucible on temperature profile of hot-zone in Czochralski silicon crystal growth;J KOR CRYST GROWTH C;2018

3. Point defect behavior in Si crystal grown by electromagnetic Czochralski (EMCZ) method;Journal of Crystal Growth;2007-02

4. Numerical Analysis for the Application of Electric Current to Silicon Semiconducting Materials;Japanese Journal of Applied Physics;2005-02-08

5. Controlling oxygen concentration and distribution in 200mm diameter Si crystals using the electromagnetic Czochralski (EMCZ) method;Journal of Crystal Growth;2002-04