Carrier Concentration Dependence of Thermal Conductivity of Iodine-Doped n-Type PbTe-Reference-Cited by-同舟云学术

Carrier Concentration Dependence of Thermal Conductivity of Iodine-Doped n-Type PbTe

Published:2000 Issue:10 Volume:41 Page:1282-1286
ISSN:0916-1821
Container-title:Materials Transactions, JIM
language:en
Short-container-title:Mater. Trans., JIM

Author:

Orihashi Masaki¹,Noda Yasutoshi²,Chen Lidong¹,Hirai Toshio¹

Affiliation:

1. Institute for Materials Research, Tohoku University

2. Department of Materials Science, Faculty of Science and Engineering, Shimane University

Publisher

Japan Institute of Metals

Subject

General Engineering

Link

https://www.jstage.jst.go.jp/article/matertrans1989/41/10/41_10_1282/_pdf

Reference26 articles.

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2. 2) Y. Noda, M. Orihashi and I. A. Nishida: Trans. IEE Jpn, 116-A (1996), 242–247.

3. 3) M. Orihashi, Y. Noda, L.-D. Chen, Y.-S. Kang, A. Moro and T. Hirai: Proc. 16th Int. Conf. Thermoelectrics (ICT ‘97), Dresden, IEEE, (1998), pp. 379–381.

4. 4) Y. Shinohara, Y. Imai, Y. Isoda, I. A. Nishida, H. T. Kaibe and I. Shiota: Proc. 16th Int. Conf. Thermoelectrics (ICT ‘97), Dresden, IEEE, (1998), pp. 386–389.

5. 5) F. J. Disalvo: Science, 285 (1999), 703–706.

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