Control of Si Crystal Growth during Solidification of Si-Al Melt-Reference-Cited by-同舟云学术

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Control of Si Crystal Growth during Solidification of Si-Al Melt

Published:2010 Issue:7 Volume:51 Page:1227-1230
ISSN:1345-9678
Container-title:MATERIALS TRANSACTIONS
language:en
Short-container-title:Mater. Trans.

Author:

Nishi Yuki¹,Kang Youngjo¹,Morita Kazuki¹

Affiliation:

1. Institute of Industrial Science, The University of Tokyo

Publisher

Japan Institute of Metals

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/matertrans/51/7/51_M2010001/_pdf

Reference8 articles.

1. 1) Y. Kato, K. Hanazawa, H. Baba, N. Nakashima, N. Yuge, Y. Sakaguchi, S. Hisawa and F. Aratani: Tetsu-to-Hagané 86 (2000) 717.

2. 2) F. A. Trumbore: Bell Syst. Tech. J. 39 (1960) 206.

3. 3) T. Yoshikawa and K. Morita: ISIJ Int. 45 (2005) 967.

4. 4) T. Yoshikawa and K. Morita: Sci. Technol. Adv. Mater. 4 (2003) 531.

5. 5) T. Yoshikawa and K. Morita: Metall. Mater. Trans. B 36B (2005) 731.

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