Crystal Nucleation Behavior Caused by Annealing of SiC Irradiated with Ne at Liquid Nitrogen Temperature or at 573 K
Author:
Affiliation:
1. Japan Atomic Energy Agency
2. Research Organization for Information Science & Technology
3. Japan Nuclear Energy Safety Organization
4. Faculty of Engineering, Ibaraki University
Publisher
Japan Institute of Metals
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.jstage.jst.go.jp/article/matertrans/48/7/48_MRA2007608/_pdf
Reference15 articles.
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3. 3) L. Calcagno, P. Musumeci and M. G. Grimaldi: Nucl. Instr. and Meth. in Phys. Res. B 148 (1999) 583–588.
4. 4) K. Sasaki, T. Yano, T. Maruama and T. Iseki: J. Nucl. Mater. 179–181 (1991) 407–410.
5. 5) K. Fukuda and K. Iwamoto: J. Mater. Sci. 11 (1976) 522–528.
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