Non-Contact Electrical Semiconductor Inspection Technology in Micro Areas Using Photoelectron Beams from Semiconductor Photocathodes
Author:
Affiliation:
1. Photo electron Soul Inc.
Publisher
Japan Institute of Electronics Packaging
Subject
Electrical and Electronic Engineering
Link
https://www.jstage.jst.go.jp/article/jiep/26/5/26_460/_pdf
Reference15 articles.
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2. 2) G. R. Neil, et al.: "Sustained Kilowatt Lasing in a Free-Electron Laser with Same-Cell Energy Recovery," Phys. Rev. Lett., Vol. 84, p. 662, 2000
3. 3) D. A. Orlov, U. Weigel, D. Schwalm, A. S. Terekhov, and A. Wolf: "Ultra-cold electron source with a GaAs-photocathode," Nucl. Instrum. Methods Phys. Res. A, Vol. 532, p. 418, 2004, https://doi.org/10.1016/j.nima.2004.06.048
4. 4) K. Aulenbacher, J. Schuler, D. Harrach, E. Reichert, J. Rothgen, A. Subashev, V. Tioukine, and Y. Yashin: "Pulse response of thin III/V semiconductor photocathodes," J. Appl. Phys., Vol. 92, p. 7536, 2002
5. 5) K. Togawa, et al.: "Surface charge limit in NEA superlattice photocathodes of polarized electron source," Nucl. Instr. and Meth. in Phys. Res. A, Vol. 414, pp. 431–445 433, 1998
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