Steady and Transient Thermal Simulation of GaN Devices for High-Speed Switching Applications
Author:
Publisher
Japan Institute of Electronics Packaging
Subject
Electrical and Electronic Engineering
Link
https://www.jstage.jst.go.jp/article/jiep/17/6/17_484/_pdf
Reference20 articles.
1. 3) T. Weatherford, Y. Wang, and S. Tracey: “TCAD analysis of self heating in AlGaN/GaN HEMTs under pulsed conditions,” Integrated Reliability Workshop Report, pp. 159-162, 2009
2. 4) R. J. Trew: “AlgaN/GaN HFET models and the prospects for physics-based compact models,” IEEE Compound Semiconductor Integrated Circuit Symposium (CSCICS), pp. 1-4, 2010
3. 5) J. B. King and T. J. Brazil: “Nonlinear electrothermal GaN HEMT model applied to high-efficiency power amplifier design,” IEEE Trans. Microwave Theory & Tech., Vol. 61, No. 1, pp. 444-454, Jan. 2013
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