3D-Stacked SRAM Using Near-Field Wireless Communication
Author:
Affiliation:
1. Dept. of EEIS, The University of Tokyo
Publisher
Japan Institute of Electronics Packaging
Subject
Electrical and Electronic Engineering
Link
https://www.jstage.jst.go.jp/article/jiep/25/6/25_549/_pdf
Reference14 articles.
1. 1) M. Horowitz: "Computing's Energy Problem (and what we can do about it)," IEEE ISSCC, pp. 10–14, Feb. 2014
2. 2) K. Shiba, et al.: "A 96-MB 3D-Stacked SRAM Using Inductive Coupling with 0.4-V Transmitter, Termination Scheme and 12:1 SerDes in 40-nm CMOS," IEEE Transactions on Circuits and Systems-I: Regular Papers (TCAS-I), Vol. 68, No. 2, pp. 692–703, Feb. 2021
3. 3) K. Cho, et al.: "SAINT-S: 3D SRAM Stacking Solution based on 7 nm TSV technology," IEEE Hot Chips, Aug. 2020
4. 4) K. Ueyoshi, et al.: "QUEST: Multi-purpose log-quantized DNN inference engine stacked on 96-MB 3-D SRAM using inductive coupling technology in 40-nm CMOS," IEEE Journal of Solid-State Circuits (JSSC), Vol. 54, No. 1, pp. 186–196, Jan. 2019
5. 5) M. Evers, et al.: "Next Generation "Zen 3" Core," IEEE Hot Chips, Aug. 2021
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