Optical and photoelectrical properties of low-concentration-Mn-doped CsPbBr3 nanocrystals

Abstract

Doping of cesium lead bromide (CsPbBr3) perovskite nanocrystals offers effective control of their optical and optoelectrical properties, leading to possibilities of several new applications. Herein, cesium lead bromide perovskite nanocrystals are synthesized with doping of a low concentration of manganese (Mn) into the perovskite lattice using manganese (II) chloride (MnCl2) as a precursor. The shift in X-ray diffraction peaks toward higher angles indicates that manganese as a dopant is present inside the cesium lead bromide lattice. A change in the manganese (II) chloride precursor concentration from 5 to 10 mmol results in an increment in the atomic percentage of manganese from 0.3 to 0.5% in the cesium lead bromide crystal. Doping of a low concentration of manganese (0.3 at.%) into cesium lead bromide results in enhancement of green emission, while doping with a higher concentration of manganese (0.5 at.%) results in blue emission. The band gap of cesium lead bromide nanocrystals increases from 2.31 to 2.53 eV with an increase in the concentration of manganese. The dark and photoelectrical conductivity of cesium lead bromide nanocrystals is improved in the case of doping with a low concentration (0.3 at.%) of manganese. The ratio of photocurrent against dark current is found to be ∼182 in manganese-doped cesium lead bromide crystal film as compared with ∼101 for undoped cesium lead bromide crystal film. Doping with a low concentration of manganese improves the overall electrical and photoelectrical conductivity of cesium lead bromide perovskite nanocrystals.