Effect of substitution and impurities on dielectric properties and resistivity of CaCu3Ti4O12

Abstract

The authors have performed the synthesis and grain growth of pure calcium copper titanate (CaCu3Ti4O12 or CCTO) compound and its derivatives by substituting silicon CaCu3SixTi4−xO12 (CCSTO) to determine the effect on dielectric properties and resistivity. The authors observed significant increase in the resistivity even with small concentration of silicon. Concentration above 5% did not produce any significant advantages; they also observed a similar increase in resistivity when CCSTO is doped with nickel. In a separate experiment, the authors soaked the CCSTO before grain growth in an organic melt. Soaking also increased the resistivity by several orders of magnitude. The authors observed almost three orders of magnitude higher resistivity in CCSTO compared with CCTO material processed under identical conditions.