Simulation of device parameters of high efficiency multicrystalline silicon solar cells

Abstract

The results of the simulation of the reported experimental results of high efficiency multicrystalline silicon (mc-Si) solar cells, using PC1D software, are reported in this study. Results obtained by various groups have been incorporated and compared in this study. The highest efficiency reported so far for mc-Si solar cells is 20·4% and 17–18% by research laboratories and commercial houses, respectively. The efficiency can be further enhanced if passivation characteristics on both the front and back surface are improved. The role of back surface recombination has become more significant in light of the use of thin mc-Si wafers by the solar cell industry. Based on the passivation characteristics and considering the understanding of the past three decades of studies, the authors have proposed and simulated a structure for mc-Si solar cells to improve the performance of the same. The results of our modeled structure of mc-Si solar cell show an efficiency of 21·88% with short-circuit current density, Jsc = 39·39 mA/cm2, and open circuit voltage, Voc = 0·666 V.