Transmission spectrum and IV characteristics of dual-gate Z-shaped graphene nanoribbon FET

Abstract

In this work, a dual-gate Z-shaped graphene nanoribbon field-effect transistor (DG-ZGNRFET) is presented. The transmission spectrum, current–voltage (IV) and differential conductance (dI/dV) characteristics have been calculated for different biasing configurations of gate voltages. The calculated transmission spectrum predicts the semiconducting nature of the channel as the transmission coefficient is zero around the Fermi level for all biasing configurations of the gate voltages. In this study, when both gates are biased with −1 V, a low threshold voltage, a high I on/I off ratio compared with those of other biasing configurations and a negative differential conductance (NDC) are observed. On the other hand, when either one or both gates are biased with +1 V, a large threshold voltage, a low value of the I on/I off ratio and negligible NDC effects are observed, which are technologically not very favourable conditions in which to operate the DG-ZGNRFET.