Sustainable nonvolatile resistive switching memory using chitosan/MEH-PPV polymer blend

Abstract

Functionalization of materials is crucial in modern science and technology, particularly biodegradable ones, to reduce the increasing electronic waste affecting the planet. In this study, the electronic behavior of chitosan was modified by incorporating the MEH-PPV polymer. Four composites with weight percentages of 0.25 (S1), 0.5 (S2), 1 (S3), and 1.5 (S4) wt% were prepared. The optical energy bandgap of these composites ranged from 2.0 to 3.02 eV. These materials were studied for their potential use in resistive switching memory (ReRAM). Two device classes: Class A (drop cast) and Class B (spin coat), were developed. The Class A S4-based device exhibited memory behavior with a minimum of 20 write/erase cycles. The other devices in this class demonstrated poor conductivity and data noise. Class B devices exhibited no switching, except for the S3-based device. Our research suggests that the thickness of class A devices has a notable impact on their performance limitations. The study shows that the chitosan:MEH-PPV blend holds promise for environmentally friendly ReRAMs, and optimizing the thickness and weight ratio can significantly improve device performance.