Barrier formation of single junctions with oxidation in SrCoO<sub>3</sub>-doped ZnO varistors sintered in a reducing atmosphere-Reference-Cited by-同舟云学术

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Barrier formation of single junctions with oxidation in SrCoO₃-doped ZnO varistors sintered in a reducing atmosphere

Published:2019-12-01 Issue:12 Volume:127 Page:912-917
ISSN:1348-6535
Container-title:Journal of the Ceramic Society of Japan
language:en
Short-container-title:J. Ceram. Soc. Japan

Author:

HIGASHI Yoshiko¹,KOGA Eiichi²

Affiliation:

1. Device Solutions Business Unit, Industrial Solutions Company, Panasonic Co., Ltd.

2. Energy Material Research Laboratory, Advanced Research Division, Panasonic Co., Ltd.

Publisher

Ceramic Society of Japan

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry,Ceramics and Composites

Link

https://www.jstage.jst.go.jp/article/jcersj2/127/12/127_19057/_pdf

Reference20 articles.

1. 1) M. Matsuoka, Jpn. J. Appl. Phys., 10, 736–746 (1971).

2. 2) T. K. Gupta, J. Am. Ceram. Soc., 73, 1817–1840 (1990).

3. 3) L. M. Levinson and H. R. Philipp, Am. Ceram. Soc. Bull., 65, 639–646 (1986).

4. 4) E. Koga and N. Sawada, Key Eng. Mat., 388, 15–18 (2009).

5. 5) E. Koga, N. Sawada, M. Amisawa, S. Minami and T. Okimoto, Panasonic Tech. J., 58, 53–58 (2012).

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